发明名称 POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR DISPLAY PANEL AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor array substrate for an organic light emission display device which has uniform display characteristics. <P>SOLUTION: A thin film transistor display panel is manufactured through processes including a process of vapor-depositing an amorphous silicon layer, a process of changing the amorphous silicon layer into a polycrystalline silicon layer by a plurality of laser shots passed through a mask, a process of forming a gate insulating film on the polycrystalline silicon layer, a process of forming a gate wire on the gate insulating film, a process of forming a 1st inter-layer dielectric on the gate wire, a process of forming a data line on the 1st inter-layer dielectric, a process of forming a 2nd inter-layer dielectric on the data wire, and a process of forming a pixel electrode on the 2nd inter-layer dielectric. The mask used for the laser shots has a plurality of laser transmission areas and blocking areas, which are mixed according to a predetermined rule. Consequently, parts which are exposed to the different laser shots in laser irradiation for making the silicon layer polycrystalline are mixed with one another to prevent a border between laser shots from being recognized as a line. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004213027(A) 申请公布日期 2004.07.29
申请号 JP20040003453 申请日期 2004.01.08
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM KENSAI;KAN SOOK-YOUNG;KIM TOHAN;LEE SHUKYO;KANG MYUNG-KOO
分类号 H01L51/50;G09F9/30;H01L21/00;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/01;H01L27/08;H01L27/12;H01L27/32;H01L29/04;H01L29/786;H01L29/788;H01L31/036;H01L31/0392;H01L31/20;H05B33/14;(IPC1-7):G09F9/30 主分类号 H01L51/50
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