发明名称 APPARATUS AND METHOD FOR APPLYING RESIST AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To form a resist film without coating defects by supplying the resist solution stably onto a substrate. <P>SOLUTION: At the leading end of a resist discharge nozzle 1, a guide bar 13 extended toward the substrate 4 from the center of the leading end is arranged. While the leading end of the resist discharge nozzle 1 is arranged in the vicinity of the surface of the substrate 4, resist solution 14 is discharged from the leading end at a low discharge rate of 0.5 cc/sec, and the discharged resist solution 14 is fed onto the surface of the substrate 4 via the guide bar 13. After the resist discharge nozzle 1 is removed by rotating the substrate 4 at a high speed, the resist solution 14 is spread over the whole surface of the substrate 4. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004214513(A) 申请公布日期 2004.07.29
申请号 JP20030001505 申请日期 2003.01.07
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 FURUKAWA TAKAMITSU
分类号 G03F7/16;B05C11/08;B05D1/40;H01L21/027 主分类号 G03F7/16
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