THIN-FILM TRANSISTOR AND ITS MANUFACTURING METHOD, AND FLAT-PANEL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress degrading of characteristic of a TFT due to hot carriers generated at the edge of the drain area of the TFT. SOLUTION: The TFT is provided with a polysilicon layer 3 as a semiconductor layer formed on an insulative substrate 1, a gate electrode 5 formed on the polysilicon layer 3 with a gate insulation film 4 in between, a channel area 31 in the semiconductor layer 3 under the gate electrode 5, and a source area 32 and a drain area 33 formed in the polysilicon layer 3 on both sides of the channel area 31. The thicknesses T1of the polysilicon layer 3 on both sides of the source area 32 side or the drain area 33 side are made larger than that T2of the polysilicon layer 3 under the central part of the gate electrode 5, and a boundary B where the polysilicon layer 3 becomes large in thickness is located under the gate electrode 5. COPYRIGHT: (C)2004,JPO&NCIPI