| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a material for forming an underlayer film, in particular, an underlayer film for a silicon-containing two-layer resist process, which functions as an excellent antireflection film and has high transparency, optimum n and k values, and excellent etching durability for processing a substrate, and to provide a method for forming a pattern. <P>SOLUTION: The method for forming a pattern is carried out by forming a photoresist underlayer film as an antireflection film containing a naphthol derivative with partial addition of hydrogen as a repeating unit on the substrate to be processed, applying a photoresist composition layer on the underlayer film, irradiating the resist in a pattern circuit region with radiation, developing with a developer solution to form a resist pattern, and processing the underlayer film and the substrate by a dry etching device using the photoresist layer as a mask. The material for forming the underlayer has the n value of 1.5 to 1.9 and the k value of 0.15 to 0.3 in the refractive index and the absorbance to develop a sufficient antireflection effect in ≥200 nm film thickness. The material shows almost an equal etching rate for CF<SB>4</SB>/CHF<SB>3</SB>gas and Cl<SB>2</SB>/BCl<SB>2</SB>gas used for processing the substrate to that of a novolac resin. The resist profile after patterning is preferable. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
