发明名称 |
METHOD FOR PRODUCING FILM COMPRISING LONG CYLINDRICAL PORES ALIGNED BY ELECTRIC FIELD |
摘要 |
PURPOSE: Provided are a method for industrially producing low dielectric constant of thin film material having excellent insulation property and mechanical strength, and a low dielectric constant of thin film produced by the method. CONSTITUTION: The method comprises the steps of (i) preparing an aqueous solution of worm-like micelle precursor comprising surfactant and salt bonded with polar head group of the surfactant, (ii) mixing a silicate and an acid with the aqueous solution to form a mixture, (iii) filling a plane-parallel capillary which consists of top/lower bases of electrode and has a thickness of several micrometers, with the mixture, (iv) applying ac(f=1 kHz) voltage of 10-20 volts to the capillary, and maintaining the applied voltage for 1-10 minutes, so as to obtain a solid porous film, and (v) removing the top base from the solid porous film, and firing the film at 350-600 deg.C for 30 minutes to 12 hours.
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申请公布号 |
KR20040065460(A) |
申请公布日期 |
2004.07.22 |
申请号 |
KR20030002438 |
申请日期 |
2003.01.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
ANDREIA, SONIN;KIM, JU YEONG;KIM, MAN WON;KIM, MU GYEOM;LEE, GWANG HUI |
分类号 |
C08J5/18;(IPC1-7):C08J5/18 |
主分类号 |
C08J5/18 |
代理机构 |
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主权项 |
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地址 |
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