| 摘要 |
PURPOSE: A CMOS image sensor and a method for manufacturing the same are provided to improve the property of the image sensor by using an ion-implanted region as an isolation layer. CONSTITUTION: An epitaxial layer(22) is formed on a substrate(21). An isolation layer(25) composed of an ion-implanted region is formed to contact the substrate through the epitaxial layer. A p-type doping region(28) is formed in the epitaxial layer and a deep n-type doping region(29) is formed at the lower of the p-type doping region, thereby forming a photodiode. A floating diffusion region(30) is formed in the epitaxial layer spaced apart from the doping regions.
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