| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to improve contact property in SAC(Self-Aligned Contact) processing by forming a nitride layer on a gate oxide spacer. CONSTITUTION: An oxide layer(33) and a nitride layer(57) as a spacer are formed on a substrate with gate electrodes(55). A lower insulating layer(59) is formed on the resultant structure. A landing plug contact hole(61) is formed by etching the lower insulating layer, the nitride layer and the oxide layer. A groove is formed by partially etching the exposed oxide layer. A nitride layer is filled in the groove. Then, a landing plug is formed in the landing plug contact hole.
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