| 摘要 |
PURPOSE: An ashing apparatus for fabricating a semiconductor device and an ashing method thereof are provided to improve an ashing ratio by providing RF power of two levels to a stage. CONSTITUTION: An ashing apparatus for fabricating a semiconductor device includes a process chamber(100), a plasma generation part, a first power supply part, a wafer stage, a baffle, and a second power supply part. The plasma generation part(200) is used for forming reaction gas of plasma state. The first power supply part(320) is used for providing the power to the plasma generation part. The wafer stage(180) is installed in the inside of the process chamber. A semiconductor substrate is loaded on the wafer stage. The baffle(160) is installed in the inside of the process chamber in order to inject the plasma. The second power supply part(340) is used for providing the power for heating the semiconductor substrate.
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