发明名称 |
Method of fabricating power rectifier device to vary operating parameters and resulting device |
摘要 |
A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type formed in surface regions of second conductivity type in the first major surface adjacent to the gates. A plurality of channels of the second conductivity type each abuts a source/drain region and extends under a gate, each channel being laterally graded with a sloped P-N junction sepcarating the channel region from the substrate of first conductivity type, In fabricating the vertical semiconductor rectifier device, a partial ion mask is formed on the surface of the semiconductor with the mask having a sloped surface which varies the path length of ions through the mask to form laterally-graded channel regions.
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申请公布号 |
US6765264(B1) |
申请公布日期 |
2004.07.20 |
申请号 |
US20030446246 |
申请日期 |
2003.05.27 |
申请人 |
ADVANCED POWER DEVICES |
发明人 |
CHANG PAUL;CHERN GEENG-CHUAN;HSUEH WAYNE Y. W.;RODOV VLADIMIR;LIN CHARLES |
分类号 |
H01L21/28;H01L21/329;H01L29/06;H01L29/78;H01L29/861;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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