THIN FILM TRANSISTOR SUBSTRATE WITH DUAL GATE TO IMPROVE CHEMICAL RESISTANCE OF GATE

摘要

PURPOSE: A TFT(Thin Film Transistor) substrate is provided to improve chemical resistance of a gate by using a dual gate structure composed of molybdenum and aluminum alloys. CONSTITUTION: A dual gate(20) is formed on a glass substrate(1), wherein a lower gate layer(21) is composed of an aluminum alloy and an upper gate layer(22) is composed of a molybdenum alloy to prevent damage of the lower layer. A gate insulating layer(2) is formed on the resultant structure. A semiconductor layer(3) is formed on the gate insulating layer to overlap the dual gate. A source(5) and a drain(6) are formed on the semiconductor layer spaced apart from each other. A pixel electrode(8) is connected to the drain.