SONOS MEMORY DEVICE WITH SIDE GATE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A SONOS(substrate-oxide-nitride-oxide-silicon) memory device with a side gate is provided to increase integration 1.5-2 times as much as a conventional technology according to a type that a memory node is formed on the side surface of a channel region by storing at least two informations in each memory device. CONSTITUTION: A semiconductor substrate is prepared. An insulation layer is formed on the semiconductor substrate. A conductive layer that is partitioned into a source region(44), a drain region(46) and a channel region(42) is formed on a predetermined region of the insulation layer. The first and second side gate stacked material is stacked on both side surfaces of the channel region of the conductive layer.