| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor-phase epitaxial growth system and a manufacturing method of an epitaxial wafer using the same apparatus wherein the influence of its flow-rate distribution can be suppressed in spite of using a relatively simple mechanism, and resultantly, a good film-thickness distribution of its wafer can be secured. SOLUTION: The vapor-phase epitaxial growth system 1 is constituted as a single wafer processing vapor-phase epitaxial growth system. A raw-material gas G is introduced into a reaction-vessel main body 2 from a gas introducing port 21. In the periphery of a susceptor 12, a bank member 23 is provided, and the raw-material gas G fed from the gas introducing port 21 is so prepared as to run on the side of a top surface 23a of the bank member 23 by its impingement on an outer peripheral surface 23b of the bank member 23 and as to flow thereafter along the principal surface of a silicon single-crystal substrate W mounted on the susceptor 12. A baffle 26 is interposed between the gas introducing port 21 and the bank member 23. In the baffle 26, there are formed a plurality of main flowing-through holes 26a and a pair of rectifying holes 26b having opening areas smaller than the ones of the holes 26a. COPYRIGHT: (C)2004,JPO&NCIPI
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