| 摘要 |
PROBLEM TO BE SOLVED: To prevent a signal between adjacent pixels from being mixed even if an overflow barrier is formed at a deep position so as to improve sensitivity per unit area. SOLUTION: A solid state imaging element includes an imaging region having a plurality of photodetecting pixels 1 and transfer registers 2 each for transferring a signal charge stored in each photodetecting pixel 1 in one direction and formed on the front layer side of a semiconductor substrate. In this solid state imaging element, a barrier region 15 of an impurity region continued in a direction perpendicular to the transferring direction is formed over the entire area of the imaging region at the position corresponding between the adjacent photodetecting pixels 1 along the transferring direction of the transfer register 2, thereby preventing the signal from being mixed by forming a sufficient potential barrier. COPYRIGHT: (C)2004,JPO&NCIPI
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