发明名称 METAL FILM FORMATION DEVICE
摘要 PROBLEM TO BE SOLVED: To form a uniform metal film regardless of the condition of raw material gas plasma. SOLUTION: In the member 21 to be etched, the numerical aperture as the ratio of the area of aperture parts to the whole area opposite in the whole face opposite to the side of a substrate 3 in a plane view state is set in accordance with the condition of raw material gas plasma, and the production of a uniform metal film is performed without according to the condition of the raw material gas plasma. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004197194(A) 申请公布日期 2004.07.15
申请号 JP20020369673 申请日期 2002.12.20
申请人 MITSUBISHI HEAVY IND LTD 发明人 SAKAMOTO HITOSHI;OGURA KEN;NISHIMORI TOSHIHIKO;IRIE TAKAYUKI
分类号 C23C16/06;C23C16/452;H01L21/285;(IPC1-7):C23C16/06 主分类号 C23C16/06
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