Disclosed herein is a composition and method for semiconductor processing. I n one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provide d. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
申请公布号
CA2550522(A1)
申请公布日期
2004.07.15
申请号
CA20032550522
申请日期
2003.12.17
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.
发明人
MINSEK, DAVID W.;BAUM, THOMAS H.;BERNHARD, DAVID D.;RATH, MELISSA K.