| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit means capable of manufacturing a semiconductor integrated circuit at a low cost without complicating a manufacturing process, even in the semiconductor integrated circuit in which a power source voltage of a logic-circuit is decreased, and further various kinds of circuits exist on the same substrate. <P>SOLUTION: The thickness of a gate oxide film of Transfer MOS in DRAM memory cell and MOS of input/output circuits and a threshold voltage are made to be same. Thus, in a semiconductor integrated circuit having integrated logic-circuit and DRAM, an optimal transistor for the action of the memory cell of DRAM is obtained, without increasing the steps. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
