| 发明名称 |
Non-volatile resistance switching memory |
| 摘要 |
A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C. |
| 申请公布号 |
US7923263(B2) |
申请公布日期 |
2011.04.12 |
| 申请号 |
US20090540949 |
申请日期 |
2009.08.13 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ALLENSPACH ROLF;BEDNORZ JOHANNES G.;MEIJER GERHARD INGMAR;LAM CHUNG HON;STUTZ RICHARD;WIDMER DANIEL |
| 分类号 |
H01L21/00;H01L21/20;H01L21/8238;H01L27/10;H01L45/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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