| 摘要 |
PROBLEM TO BE SOLVED: To improve step coverage of Al or an Al alloy layer forming wiring in a method for forming wiring. SOLUTION: After the formation of an insulating film 12 by covering the connected part on the surface of a semiconductor substrate 10, a connecting hole 12a corresponding to the connected part is formed on the insulating film 12. The connecting hole 12a is formed so as to have increasing opening diameter outwardly. Next, after the successive formation of a Ti film 14 and a TiON film 16 on the substrate surface by sputtering, an Al alloy layer 18 such as Al-Si-Cu etc., is formed by sputtering. Next, successively, the Al alloy layer 18 is fluidized by annealing step at the substrate temperature of 350-450°C in the pressure-reduced atmosphere, and the connecting hole 12a is thereby filled up. Through these procedures, the reflow capacity of the Al alloy layer 18 can be improved by using a TiON film 16 as a base film of the Al alloy layer 18. Finally, the patterning step of wiring is performed. COPYRIGHT: (C)2004,JPO&NCIPI
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