| 摘要 |
PROBLEM TO BE SOLVED: To guarantee an operation having no problem for a magnetic field from an environment in which an MRAM cell is applied by fully magnetically shielding the MRAM cell even for a large external magnetic field. SOLUTION: A magnetic random access memory (MRAM) 30 comprising a TMR element 10 obtained by laminating magnetization fixing layers 4, 6 in each of which a magnetization direction is fixed, and a magnetic layer (storage layer) 2 in which the magnetization direction can be changed, are laminated to form a TMR element 10. The magnetic random access memory (MRAM) 30 comprising the TMR element 10 is mixedly mounted with such elements 38 as DRAM on the substrate. Magnetic shielding layers 33, 34 are formed on an area region occupied by the memory cell 30, or/and a distance (particularly, a length or a width) between opposed sides of the magnetic shielding layers 33, 34 is set to 15 mm or shorter. COPYRIGHT: (C)2004,JPO&NCIPI
|
