发明名称 |
METHOD AND SYSTEM FOR PROVIDING A THIN FILM |
摘要 |
Figure 1 shows the method and system for generating a metal thin film (170) with a uniform crystalline orientation and a controlled crystalline microstructure are provided. For example, a metal layer is irradiated with a pulse laser (111) to completely melt the film throughout its entire thickness. The metal layer can then resolidify to form grains with a substantially uniform orientation. The resolidified metal layer can be irradiated with a sequential lateral solidification technique to modify the crystalline microstructure (e.g., create larger grains, single-crystal regions, grain boundary controlled microstructures, etc.) The metal layer can be irradiated by patterning a beam using a mask (150) which includes a first region capable of attenuating (130) the pulsed laser and a second region allowing complete irradiation of sections of the thin film being impinged by the masked laser beam. An inverse dot-patterned mask (150) can be used, the microstructure that may have substantially the same as the geometric pattern as that of the dots of the mask. |
申请公布号 |
WO03084688(A3) |
申请公布日期 |
2004.07.15 |
申请号 |
WO2003US09861 |
申请日期 |
2003.04.01 |
申请人 |
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OFNEW YORK;IM, JAMES, S.;CHOI, JAE, BEOM |
发明人 |
IM, JAMES, S.;CHOI, JAE, BEOM |
分类号 |
B21C;B23K26/00;C07C19/08;C09K19/34;H01L21/00;H01L21/31;H01L21/84;H05H1/24;(IPC1-7):H01L21/00 |
主分类号 |
B21C |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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