发明名称 |
High Q inductor with faraday shield and dielectric well buried in substrate |
摘要 |
Inductor losses to a semiconducting substrate are eliminated in an IC structure by etching a well into the substrate down to the insulating layer coating the substrate and fabricating a grounded Faraday shield in the shape of elongated segments in the bottom of the well. The well lies directly below the inductor and is optionally filled with cured low-k organic dielectric or air.
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申请公布号 |
US6762088(B2) |
申请公布日期 |
2004.07.13 |
申请号 |
US20030336291 |
申请日期 |
2003.01.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ACOSTA RAUL E.;LUND JENNIFER L.;GROVES ROBERT A.;ROSNER JOANNA;CORDES STEVEN A.;CARASSO MELANIE L. |
分类号 |
H01F41/04;H01F17/00;H01F17/02;H01F27/36;(IPC1-7):H01L21/20 |
主分类号 |
H01F41/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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