FLASH MEMORY DEVICE HAVING COLUMN PRE-DECODER WHICH CAN CHOOSE ALL COLUMN SELECTING TRANSISTOR AND ITS STRESS TEST METHOD

摘要

PROBLEM TO BE SOLVED: To provide a flash memory device wherein time required for a stress test can be reduced and to provide a stress test method.

SOLUTION: A column pre-decoder in the flash memory device comprises a buffer part inputting and inverting all column selecting signals, a decoder part decoding output of the buffer part and column addresses, and a level shift variably changing voltage levels of the column selection signals applied to gates of a column selection transistor in response to output of the decoder part, and applies high voltage to all of the column selection signals in response to the all column selection signals when a stress test is performed.

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