发明名称 COMPOSITION FOR RESIST UNDERLAYER FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a composition for a resist underlayer film excellent in storage stability for obtaining a resist underlayer film which ensures no resist peeling, improves pattern reproducibility, and has alkali resistance and resistance to oxygen ashing in resist removal when disposed under a resist. <P>SOLUTION: The composition for a resist underlayer film comprises (A) a hydrolysis-condensation product of an alkoxysilane mixture including a compound represented by the formula (1): Si(OR<SP>2</SP>)<SB>4</SB>and a compound represented by the formula (2): R<SP>1</SP><SB>n</SB>Si(OR<SP>2</SP>)<SB>4-n</SB>and (B) a hydrolysis-condensation product of at least a compound represented by the above formula (2). In the formula (1), symbols R<SP>2</SP>may be the same or different and each represents a monovalent organic group. In the formula (2), symbols R<SP>1</SP>may be the same or different and each represents a monovalent organic group or H; symbols R<SP>2</SP>may be the same or different and each represents a monovalent organic group; and n is an integer of 1-2. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004191386(A) 申请公布日期 2004.07.08
申请号 JP20020325402 申请日期 2002.11.08
申请人 JSR CORP 发明人 SUGITA HIKARI;KONNO KEIJI;KOBAYASHI YASUTAKA;TANAKA MASATO;SHIMOKAWA TSUTOMU
分类号 G03F7/11;C08L83/02;C08L83/04;H01L21/027 主分类号 G03F7/11
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