发明名称 |
Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film |
摘要 |
A cobalt-containing film on a silicon-containing conductive region, and a titanium-rich capping layer is formed on cobalt-containing film. The atomic % ratio of titanium to other elements (if any) in the titanium-rich capping layer is more than one (1). The resultant structure is annealed so that cobalt of the cobalt-containing film and silicon of the silicon-containing conductive region react with each other to form a cobalt silicide film. When the formation of the cobalt-containing film is carried out at a high temperature, a diffusion restraint interface film is also formed.
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申请公布号 |
US2004132268(A1) |
申请公布日期 |
2004.07.08 |
申请号 |
US20030686768 |
申请日期 |
2003.10.17 |
申请人 |
KOO KYEONG-MO;KU JA-HUM;PARK HYE-JEONG |
发明人 |
KOO KYEONG-MO;KU JA-HUM;PARK HYE-JEONG |
分类号 |
C23C14/02;C23C14/16;C23C14/58;H01L21/28;H01L21/336;(IPC1-7):H01L21/28 |
主分类号 |
C23C14/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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