| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor laser element by which the cracking of a substrate can be prevented in manufacturing a semiconductor laser element by suppressing the deterioration of laser characteristics and the fall of current injecting efficiency. SOLUTION: This method of manufacturing the semiconductor laser element includes a step of forming a first semiconductor laser layer 10 containing a ridge 10a and a second semiconductor laser layer 20 containing another ridge 20a on an n-type GaAs substrate 1, a step of forming a non-doped GaAs layer 3 so as to cover the top faces and side faces of the ridges 10a and 20a, and a step of forming ion-implanted portions 3a reaching the top faces of the ridges 10a and 20a by implanting zinc (Zn) ions into the areas corresponding to the ridges 10a and 20a of the non-doped GaAs layer 3. This method also includes a step of forming p-side ohmic electrodes 4 on the ion-implanted portions 3a of the GaAs layer 3. COPYRIGHT: (C)2004,JPO&NCIPI
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