| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for vapor deposition which can reduce the manufacturing cost in the case of applying to an MOCVD method. SOLUTION: Film forming gas is supplied to a duct 11 for the film forming gas, and inert gas is supplied to a duct 12 for the inert gas. When the gas is supplied in this manner, the film forming gas injected from a film forming gas nozzle 16 disposed at the center of a base 13 flows on the surface of the wafer placed on a stage. Meanwhile, the inert gas injected from the inert gas nozzle 17 spreads upward above the wafer without getting to the surface of the wafer. As a result, the diffusion of the film forming as above the wafer is suppressed. Thus, the utilization efficiency of the film forming gas is improved, and the manufacturing cost can be reduced. COPYRIGHT: (C)2004,JPO&NCIPI
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