| 摘要 |
High-speed sense current amplifier with a low power consumption for a memory cell (1), the sense current amplifier having: a first current mirror circuit (53, 55), which amplifies a memory signal current (IBL) received from the memory cell (1) via a memory signal line (3) and outputs it at a signal output (16) of the sense current amplifier (11); a second current mirror circuit (53, 54), which generates a setting current (ISETTING) in a manner dependent on the received memory signal current (IBL); and an adjustable reference current source (23), which outputs a reference current (IREF) to the signal output (20) of the sense current amplifier (11), the magnitude of the output reference current (IREF) being set, via a setting line (28), in a manner dependent on the setting current (ISETTING) generated by the second current mirror circuit (53, 54).
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