| 摘要 |
PURPOSE: A method of forming a photoresist pattern of a semiconductor device is provided to perform successfully a halo ion-implantation by removing completely photoresist of a bit line contact region and forming a desired photoresist pattern on a storage node contact region using an exposure mask with a non-exposure part. CONSTITUTION: Gate patterns(108) are formed on a semiconductor substrate with an active region(100) and an isolation region(102). A photoresist layer for enclosing entirely the gate patterns is formed on the resultant structure. An exposure is performed on the photoresist layer by using an exposure mask with non-exposure parts. A photoresist pattern(110) is formed by removing completely the exposed photoresist of a bit line contact region(104) and leaving non-exposed photoresist on a storage node contact region(106). The photoresist pattern is protruded from the gate pattern as much as 0.3 to 0.6 μm.
|
