| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the damage of a fuse in laser cutting by forming a guard ring between the fuses. CONSTITUTION: The first interlayer dielectric(32) is formed on a substrate(30) with an isolation layer(31). A plurality of fuses(33) are formed on the first interlayer dielectric. The second interlayer dielectric(34) is formed to cover the fuses. A guard ring region is formed by selectively etching the second interlayer dielectric between the fuses. Guard rings(36) are formed in the guard ring region.
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