METHOD FOR MANUFACTURING MIM CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an MIM capacitor of a semiconductor device is provided to improve the stability by forming an MIN structure using a PR mask. CONSTITUTION: A sub metal film and a nitride layer are deposited on an oxide layer. The sub metal film is selectively etched. An IMD(Inter-Metal Dielectric) is formed on the resultant structure. By etch-back of the IMD, the nitride layer is entirely removed. An MIN structure is formed by sequentially stacking a nitride layer(50), a Ti film(60) and a TiN layer(70) on the IMD and patterning using a PR mask.