| 摘要 |
PURPOSE: A method for cleaning a wafer is provided to perform easily a cleaning process without the damage of the wafer by controlling the temperature of deionized water baths in front of and in rear of a chemical bath. CONSTITUTION: A method for cleaning a wafer includes a cleaning process using a chemical bath and a front and a rear deionized water bath. A preheating process for a wafer is performed within the front deionized water bath. At this time, the temperature of the front deionized water bath is higher than the temperature of the chemical bath. The preheated wafer is dipped into the chemical bath. The wafer is dipped into the rear deionized water bath. The rear deionized water bath is cooled under the normal temperature.
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