METHOD FOR FORMING BONDING PAD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a bonding pad of a semiconductor device is provided to prevent the corrosion of the bonding pad and solve probing problems by carrying out heat treatment at a high temperature in a degas chamber for removing the residues of fluorine gas. CONSTITUTION: A metal layer is formed on a lower insulating layer(10). The metal layer is made of a barrier metal(12), an aluminium layer(14), and an anti-reflective coating(16). A passivation layer(18) is formed on the metal layer. A pad pattern is formed on the resultant structure. An opening portion is formed by selectively etching the passivation layer using the pad pattern as a mask. The pad pattern is removed by carrying out an ashing and a chemical process. A heat treatment is carried out on the resultant structure in a degas chamber for removing residual fluorine gas. The heat treatment is carried out at the temperature of 150-400 deg.C for 150-600 second.