METHOD OF MANUFACTURING TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a transistor of a semiconductor device is provided to prevent SCE(Short Channel Effect) by controlling the length of a sacrificial layer as a spacer and to restrain reverse SCE by performing ion-implantation for a threshold voltage after forming a source/drain electrode. CONSTITUTION: A sacrificial layer(44) is formed on a substrate(40). A source/drain electrodes(46) are formed in the substrate by performing the first ion-implantation using the sacrificial layer as a mask. A barrier layer(48) is continuously formed on the resultant structure. Spacers are formed by removing partially the sacrificial layer. The second ion-implantation for controlling a threshold voltage of the substrate is performed by using the spacer as a mask. A gate electrode is formed between the spacers. The third ion-implantation is performed to control doping concentration of the gate electrode.