| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to prevent a contact fail and improve reliability of a device by preventing damage to a substrate in removing a nitride layer of a contact region. CONSTITUTION: A semiconductor substrate(10) is prepared in which a gate line(12) composed of a gate and a hard mask is formed on the substrate. A gate line spacer and a nitride layer(13) as an etch stop layer are formed on the resultant structure to cover the gate line. An interlayer dielectric(14) is formed on the resultant structure to fill the space between the nitride layers. The interlayer dielectric is etched by a self-align contact process until a part of the nitride layer is exposed so that a contact hole is formed while polymer is formed in the contact hole. A predetermined thickness of the nitride layer on the bottom of the contact hole while the polymer is removed. The remaining nitride layer on the bottom of the contact hole is eliminated to expose the substrate in the contact hole.
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