发明名称 Silicon-based ultra-violet LED
摘要 A light emitting diode (LED), and a method for producing the same. The LED includes a substrate that may be made of silicon, a first conductive layer on one side, and a porous insulating layer on the opposite side. The insulating layer defines microcavities therein, the microcavities having sharp tips on their inner surfaces. The microcavities have gas inside. A second conductive layer is disposed over the insulating layer. When an electrical potential is applied between the conductive layers, the gas-filled microcavities act as plasma discharge lamps, emitting light. The light may be in the ultraviolet portion of the spectrum. The method includes etching a substrate to produce a porous insulating layer on one side, depositing a first conductive layer on the opposite side, and depositing a second conductive layer over the insulating layer. The microcavities in the insulating layer are then filled with gas.
申请公布号 US6759686(B2) 申请公布日期 2004.07.06
申请号 US20030389520 申请日期 2003.03.14
申请人 CHEAH KOK WAI;WONG WAI KWOK;TAM HOI LAM 发明人 CHEAH KOK WAI;WONG WAI KWOK;TAM HOI LAM
分类号 H01L21/00;H01L27/15;H01L31/0328;H01L33/34;(IPC1-7):H01L27/15 主分类号 H01L21/00
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