METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent etch residues due to moat effect by preventing the exposing of a linear nitride layer. CONSTITUTION: A trench(42) is formed in a substrate(40) by using pad oxide pattern(41) and pad nitride pattern. A wall oxide layer(44) is formed at inner walls of the trench. A linear nitride layer(46) is formed on a wall oxide layer. A field oxide layer(48) is then formed in the trench and planarized. The pad nitride pattern is removed. A sacrificial oxide layer(52) is formed on the resultant structure to cover the linear nitride layer. Then, the sacrificial oxide layer is removed.