METHOD FOR FABRICATING SHALLOW TRENCH ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a shallow trench isolation layer of a semiconductor device is provided to prevent the generation of voids by burying a gap-fill insulating layer into a trench. CONSTITUTION: A pad oxide layer(102) and a hard mask layer are laminated on a semiconductor substrate(100). A hard mask pattern and a pad oxide layer pattern are formed by patterning the hard mask layer and the pad oxide layer. A trench is formed by etching the semiconductor substrate. A lateral part and an upper part of the hard mask layer are etched by performing a wet etch process. A spacer is formed on an inner wall of the hard mask layer. A gap-fill insulating layer is formed on the trench. A shallow trench isolation layer(110a) is formed by planarizing a surface of the gap-fill insulating layer.