METHOD FOR FABRICATING CONDUCTIVE PATTERN HAVING ULTRA-NARROW LINE WIDTH OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a conductive pattern having ultra-narrow line width of a semiconductor device is provided to obtain an etch margin of a conductive layer and overcome a limit of a photolithography process by fabricating easily an insulating layer pattern having the ultra-narrow line width without reducing thickness of a photoresist pattern. CONSTITUTION: A conductive layer(106) is deposited on a semiconductor substrate(100). The first insulating layer is deposited on the conductive layer. The first photoresist pattern is formed on the first insulating layer in order to define a region between conductive patterns. The first insulating layer is patterned and the photoresist first pattern is removed. The second insulating layer is deposited thereon. The first insulating layer pattern is separated by planarizing the second insulating layer. A photoresist is coated on a groove between the second insulating layers. The second photoresist pattern(114) is formed by hardening the photoresist. The first and the second insulating layer are removed except for the second insulating layer under the photoresist. The conductive layer is patterned according to the second photoresist pattern and the second insulating layer. The second photoresist pattern and the second insulating layer are removed therefrom.