| 摘要 |
PURPOSE: A method for manufacturing a MOS transistor is provided to prevent short-channel effect without reducing transconductance by decreasing the resistance of an LDD(Lightly Doped Drain). CONSTITUTION: A gate insulating layer(102) and a gate electrode are sequentially formed on a substrate(101). An epitaxial blocking layer is formed on the resultant structure. The first LDD diffusion region(105) is formed in the substrate. By anisotropic etching of the epitaxial blocking layer, a spacer(104) is formed at both sidewalls of the gate electrode. An SEG(Selective Epitaxial Growth) layer(106) is formed on an active region of the first LDD diffusion region. The second LDD diffusion region(107) is formed in the substrate. An insulating spacer(108) is formed at both sidewalls of the spacer. A heavily doped diffusion region(109) is then formed in the substrate.
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