| 摘要 |
PURPOSE: A method for forming a storage node contact of a semiconductor device is provided to open easily a storage node contact hole and to prevent short between a bit line and the storage node contact by forming a storage node contact spacer before forming the storage node contact. CONSTITUTION: The first interlayer dielectric(33) with landing plugs(34a,34b) is formed on a semiconductor substrate(31). The second interlayer dielectric(35) is formed on the resultant structure. Bit lines are selectively formed on the second interlayer dielectric. The third interlayer dielectric(39) is formed on the second dielectric layer including the bit lines. Storage node contact holes are formed by etching sequentially the third and second interlayer dielectric to expose the landing plugs between bit lines. An insulating spacer(41) as a storage node contact spacer is formed at sidewalls of each storage node contact hole. A storage node contact(42) is filled in each storage node contact hole to electrically contact the landing plug. At this time, the storage node contact is isolated from the bit line by the insulating spacer.
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