发明名称 FLASH MEMORY DEVICE
摘要 PURPOSE: A flash memory device is provided, which is used as a data memory device by increasing endurance characteristics of the flash memory device. CONSTITUTION: An erase counter part(10) counts erase numbers of a cell block being used by receiving an erase signal, and outputs an overflow signal if the erase number is above a fixed number. An address conversion part(12) converts an address signal received in response to the overflow signal into an unused cell block address. An address decoder(13) receives the address signal converted from the address conversion part and then decodes it. And a flash cell block(14) drives the cell block selected according to the output of the address decoder.
申请公布号 KR20040058535(A) 申请公布日期 2004.07.05
申请号 KR20020084807 申请日期 2002.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 OH, MYEONG GYU
分类号 G11C16/08;(IPC1-7):G11C16/08 主分类号 G11C16/08
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