| 摘要 |
PURPOSE: A thin film transistor(TFT) is provided to not only simplify manufacturing process but also control a leakage current by forming an LDD region wider than the gate electrode and a source/drain region by implanting high density doping ions into the LDD region. CONSTITUTION: An n and p type TFT are formed on the first and second active layer on a substrate(52) with similar structure. The first gate electrode(62N) is formed on a gate insulation layer(72) covering the first active layer. An LDD region(58L) in the first active layer is formed next to the both sides of the first channel(64C) whose width is narrower than that of the gate electrode. The first source and drain region(64S,64D) are formed in the first active layer by doping n type impurity into the LDD region with high density. The first source and drain electrode(78N,80N) are formed to be partly connected to the source and drain region, lying outside an interlayer dielectric(74), covering the gate electrode.
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