| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing attack of conductive patterns and minimizing the reduction of the area of a contact opening part. CONSTITUTION: A plurality of conductive patterns(32) with a hard mask(33) and a sacrificial hard mask are formed on a substrate(30). An insulating layer(36) is formed on the resultant structure and planarized by removing the insulating layer and the sacrificial hard mask to expose the hard mask. A contact hole(38) is formed by selectively etching the insulating layer using a cell contact open mask(37). A plug is then formed in the contact hole.
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