| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to enhance capacitance by increasing the surface area of a storage node using at least four storage node contact holes. CONSTITUTION: A semiconductor substrate with a gate electrode(108) is prepared. An interlayer dielectric is formed on the resultant structure. At least four storage node contact holes(122a,122b,122c,122d) are formed by selectively etching the interlayer dielectric. A lower electrode, a dielectric film and an upper electrode are sequentially formed on the storage node contact holes.
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