| 摘要 |
PURPOSE: A method for forming an impurity junction region of a semiconductor device is provided to minimize the contact resistance between a storage node and a substrate and to prevent punch-through by additionally doping boron ions into a drain region. CONSTITUTION: A gate oxide layer(35) and a gate electrode(37) with a hard mask(39) are formed on a substrate(31) with an isolation layer(33). A spacer insulating layer(41) and an interlayer dielectric(43) are stacked on the resultant structure. A landing plug contact hole is formed to expose the substrate by selectively etching the interlayer dielectric and the spacer insulating layer. A source and drain region(49a,49c) are formed by implanting n-type impurities into the exposed substrate. P-type impurities are selectively implanted into the drain region.
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