METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing encroachment of wet-etchant into a cell region when removing an insulating layer in a peripheral region. CONSTITUTION: A plurality of conductive patterns(G1,G2) are formed on a cell region(X-X') and a peripheral region(Y-Y') of a substrate(40). A BPSG layer(45) and a TEOS or HDP oxide layer are sequentially formed on the resultant structure. Plugs(48) are formed to contact the substrate between the conductive patterns through the oxide layer and the BPSG layer of the cell region. At this time, a dummy pattern(48') is simultaneously formed between the cell and peripheral region. By using a photoresist pattern to open the peripheral region, the oxide layer and the BPSG layer of the peripheral region are removed.