| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent damage of the sidewalls of the isolation layer by oxidizing a polysilicon layer. CONSTITUTION: A pad oxide layer and a pad nitride layer are stacked on a substrate(201) to define an isolation region. A trench is formed in the isolation region. The entire surface of the pad nitride layer is uniformly etched. A polysilicon layer(206) is formed at the sidewalls of the pad nitride layer and on the trench. An isolation layer(207) is formed by filling an insulating layer in the trench and planarizing to expose the pad nitride layer. The pad nitride layer is removed. An oxide layer is formed by oxidizing the exposed polysilicon layer.
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