Stack gate electrode suppressed with interface-reaction and method for fabricating semiconductor device having the same

摘要

The present invention is related to a stack gate electrode capable of suppressing a formation of a non-uniform silicide layer at an interface between a polysilicon layer and a metal layer during a selective oxidation process and a thermal process both being performed after a gate patterning process and a method for fabricating a semiconductor device including the same. The stack gate electrode includes: a silicon layer; a reaction prevention layer formed on the silicon layer, wherein the reaction prevention layer containing nitrogen and silicon has a surface density of nitrogen above about 1x10<15>/cm<2>; and a metal layer formed on the reaction prevention layer.