发明名称 Precursor material delivery system for atomic layer deposition
摘要 A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, from which a series of pulses is released toward the reaction space. The precursor material is typically vaporized after loading it in the precursor container by heating or reducing the pressure inside the precursor container. A vacuum line is preferably coupled to the precursor container and bypasses the reaction space for reducing pressure inside the precursor container without drawing particles into the reaction space. A high conductivity particle filter having inertial traps may be included, preferably between the precursor container and a staging volume, for filtering particles from the precursor material.
申请公布号 US2004124131(A1) 申请公布日期 2004.07.01
申请号 US20030660365 申请日期 2003.09.10
申请人 AITCHISON BRADLEY J.;MAULA JARMO;LESKINEN HANNU;LANG TEEMU;KUOSMANEN PEKKA;HARKONEN KARI;SONNINEN MARTTI 发明人 AITCHISON BRADLEY J.;MAULA JARMO;LESKINEN HANNU;LANG TEEMU;KUOSMANEN PEKKA;HARKONEN KARI;SONNINEN MARTTI
分类号 C23C16/44;C30B25/14;(IPC1-7):B01D36/00 主分类号 C23C16/44
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