发明名称 Protective layer for an organic thin-film transistor
摘要 An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.
申请公布号 EP1434282(A2) 申请公布日期 2004.06.30
申请号 EP20030028942 申请日期 2003.12.17
申请人 发明人
分类号 G02F1/1368;H01L27/28;H01L35/24;H01L51/05;H01L51/10;H01L51/30;H01L51/40;(IPC1-7):H01L51/20 主分类号 G02F1/1368
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